A Product Line of
Diodes Incorporated
DMN6066SSD
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Millimeters
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
0.050 BSC
1.27 BSC
A1
D
H
E
L
0.004
0.189
0.228
0.150
0.016
0.010
0.197
0.244
0.157
0.050
0.10
4.80
5.80
3.80
0.40
0.25
5.00
6.20
4.00
1.27
b
c
θ
h
-
0.013
0.008
0.010
-
0.020
0.010
0.020
-
0.33
0.19
0.25
-
0.51
0.25
0.50
-
Suggested Pad Layout
1.52
0.060
7.0
0.275
0.6
0.024
4.0
0.155
1.27
0.050
mm
inches
DMN6066SSD
Document Number DS32109 Rev 3 - 2
8 of 9
www.diodes.com
December 2011
? Diodes Incorporated
相关PDF资料
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相关代理商/技术参数
DMN6066SSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6066SSS-13 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6068LK3 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3_10 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3-13 功能描述:MOSFET ENHANCE MODE MOSFET 60V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN6068SE 制造商:Diodes Incorporated 功能描述:MOSFET N CH DIOD 60V 4.1A SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous
DMN6068SE_11 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068SE-13 功能描述:MOSFET ENHANCE MODE MOSFET 60V N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube